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 Semiconductor
STS1979
PNP Silicon Transistor
Description
* Medium power amplifier
Features
* Large collector current : ICMax=-500mA * Suitable for low-Voltage operation because of its low saturation voltage * Complementary pair with STS5342
Ordering Information
Type NO. STS1979 Marking STS1979 Package Code TO-92
Outline Dimensions
3.450.1 4.50.1 2.250.1
unit : mm
4.50.1
0.40.02
2.060.1
14.00.40
1.27 Typ. 2.54 Typ.
123
1.200.1
0.38
PIN Connections 1. Emitter 2. Base 3. Collector
KST-9051-000
1
STS1979
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature
(Ta=25C)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
-40 -32 -5 -500 625 150 -55~150
Unit
V V V mA mW C C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance
(Ta=25C)
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob
Test Condition
IC=-100A, IE=0 IC=-10mA, IB=0 IE=-10A, IC=0 VCB=-40V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz
Min. Typ. Max.
-40 -32 -5 120 200 7.5 -0.1 -0.1 240 -0.25 -
Unit
V V V A A V MHz pF
KST-9051-000
2
STS1979
Electrical Characteristic Curves
Fig. 1 PC - Ta Fig. 2 IC - VBE
Fig. 3 I C - VCE
Fig. 4 VCE(sat) - IC
Fig. 5 hFE - IC
Fig. 6 hFE -
IC
KST-9051-000
3


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